- 1 For An N Type Gaas P Type Alo 3g20 7as Heterojunction At Room Temperature 300k Aec 0 21 Ev Find The Total Deple 1 (74.96 KiB) Viewed 17 times
1. For an n-type GaAs/p-type Alo.3G20.7As heterojunction at room temperature (300k), AEC = 0.21 eV. Find the total deple
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1. For an n-type GaAs/p-type Alo.3G20.7As heterojunction at room temperature (300k), AEC = 0.21 eV. Find the total deple
1. For an n-type GaAs/p-type Alo.3G20.7As heterojunction at room temperature (300k), AEC = 0.21 eV. Find the total depletion width at thermal equilibrium when both sides have impurity concentration of 5 x 1015 cm ?. (Hint: the bandgap of Al Gal—r As is given by Eg(x)= 1.424 + 1.247x eV, and the dielectric constant is 12.4 – 3.12x). Assume Nc and Ny for Al Gal-x As the No = 4.82-1015.1312.(0.063+0.083x)3/2 (cm) and N, = 4.82·1015.13/2.(0.85-0.14x)3/2 (cm3).