What is the threshold voltage in millivolts for a MOS capacitor with an N+ polysilicon gate and an N-type body doped wit

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What Is The Threshold Voltage In Millivolts For A Mos Capacitor With An N Polysilicon Gate And An N Type Body Doped Wit 1 (26.24 KiB) Viewed 16 times

What is the threshold voltage in millivolts for a MOS capacitor with an N+ polysilicon gate and an N-type body doped with phosphorus at a concentration of 8.5 x 10^16/cm^3? Assume that the oxide thickness is 72.4 angstroms. Use: kt/q = 26mV and ni = 1.5 x 10^10/cm^3 at 300°K, as = 11.7, cox = 3.9, 80 = 8.854 x 10^-14 F/cm, and q = 1.6 x 10^-19 C. Assume that the intrinsic Fermi level, Ei, is in the middle of the band- gap, and use Eg = 1.12eV. For this question, be sure to give your answer to the nearest millivolt!