sssssss Please answer these 3 questions. only answers are needed

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sssssss Please answer these 3 questions. only answers are needed

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sssssss Please answer these 3 questions. only answers are needed
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Question 12 Not yet answered Marked out of 3.00 Flag question The built-on potential of an equally-doped Si pn junction diode is 0.7 V. What is the doping concentration of the n-doped region in? Give your answer in cmº rounded to 3 significant figures. List of Constants: (save the list for use if necessary) electron charge a = 1.60 x 10-19 C free electron mass m. = 9.11 x 10-31 kg proton mass mp = 1.67 x 10-27 kg Planck constant n = 6.63 x 10-34 JS Boltzmann constant k = 1.38 x 10-23 JK free-space permittivity & = 8.85 x 10-12 F/m free-space permeability Ho = 1.26 x 10-6 H/m velocity of light c = 3.00 x 108 m/s bandgap energy of Si (300K) = 1.12 eV electron mobility of Si, un (300K) = 1350 cm2/Vs hole mobility of Si, ſp (300K) = 480 cm2/Vs intrinsic carrier concentration of Si (300K), ni = 1.08 x 1010 cm-3 thermal voltage, VT = 26 diode saturation current, Is =lx 10-12 A mV

Question 12 Not yet answered Marked out of 3.00 Flag question The built-on potential of an equally-doped Si pn junction diode is 0.7 V. What is the doping concentration of the n-doped region in? Give your answer in cmº rounded to 3 significant figures. List of Constants: (save the list for use if necessary) electron charge a = 1.60 x 10-19 C free electron mass m. = 9.11 x 10-31 kg proton mass mp = 1.67 x 10-27 kg Planck constant n = 6.63 x 10-34 JS Boltzmann constant k = 1.38 x 10-23 JK free-space permittivity & = 8.85 x 10-12 F/m free-space permeability Ho = 1.26 x 10-6 H/m velocity of light c = 3.00 x 108 m/s bandgap energy of Si (300K) = 1.12 eV electron mobility of Si, un (300K) = 1350 cm2/Vs hole mobility of Si, ſp (300K) = 480 cm2/Vs intrinsic carrier concentration of Si (300K), ni = 1.08 x 1010 cm-3 thermal voltage, VT = 26 diode saturation current, Is =lx 10-12 A mV

Question 12 Not yet answered Marked out of 3.00 Flag question The built-on potential of an equally-doped Si pn junction diode is 0.7 V. What is the doping concentration of the n-doped region in? Give your answer in cmº rounded to 3 significant figures. List of Constants: (save the list for use if necessary) electron charge a = 1.60 x 10-19 C free electron mass m. = 9.11 x 10-31 kg proton mass mp = 1.67 x 10-27 kg Planck constant n = 6.63 x 10-34 JS Boltzmann constant k = 1.38 x 10-23 JK free-space permittivity & = 8.85 x 10-12 F/m free-space permeability Ho = 1.26 x 10-6 H/m velocity of light c = 3.00 x 108 m/s bandgap energy of Si (300K) = 1.12 eV electron mobility of Si, un (300K) = 1350 cm2/Vs hole mobility of Si, ſp (300K) = 480 cm2/Vs intrinsic carrier concentration of Si (300K), ni = 1.08 x 1010 cm-3 thermal voltage, VT = 26 diode saturation current, Is =lx 10-12 A mV

Not yet answered Marked out OT 3.00 Consider in a three-phase Y-connected voltage source, if the voltages are: V=Vcos(ot) VEV.cos(0-120°) V=Vcos(@+120°) At a certain time, 2V = V = 100 V. vt Va vo + Please choose the value that is the closest to the RMS of the line voltage. Select one: A. 200 V B. 125 V C. 75 V D. 250 V E. 100 V

Question 23 Not yet answered Marked out of 3.00 P Flag question A cable TV service uses a single coaxial cable to transmit 12 discrete TV channels, each having a bandwidth of 60 kHz. Guard bands with bandwidths of 2 kHz are inserted between the sub-bands occupied by each channel. What is the minimum bandwidth required for transmission? (2 marks) What is the role of the guard band? (1 marks) Answer:
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