3. (a) In a doped semiconductor, the donor binding energy, AE, as measured from the conduction band edge is given by m ΔΕ =-ER () 1 €2' me
where ε is the relative permittivity of the solid. Using the information given the table below, calculate the donor binding energy for electrons doped into the semiconductor Ge. Repeat the calculation for electrons doped into WO3 (tungsten trioxide, an insulator), and comment on the difference between your answers, and ER 13.6 eV. = me E Ge 0.1me 15.8 WO3 1.5me 5.0 band gap energy/eV 0.75 3.5
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