50 40 602 24 NO (A) 20 K 10 390 10 20 10 40 50 ,-*.-...) (V) (6) 301 911 123 Figure 5 The equations for Kand I are given

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50 40 602 24 No A 20 K 10 390 10 20 10 40 50 V 6 301 911 123 Figure 5 The Equations For Kand I Are Given 1 (26.09 KiB) Viewed 71 times

50 40 602 24 NO (A) 20 K 10 390 10 20 10 40 50 ,-*.-...) (V) (6) 301 911 123 Figure 5 The equations for Kand I are given in partick 30) Refer to Figure 5. VGS A) 6.9V 8)36V C) 44V 0176V 31) Roter to Figures. The curve in (b) is for the transistor in (a). From the curve the value of a approximately A) 0.44 mA/V2 B) 0.55 mA/V2 C) 0.22 mA/V2 D) 0.33 MAINZ 32) Refer to figure 5. ip is approximately A) 22 A B) 34 mA C) 0.81 mA D) 1.2 mA 33) Reter te Figure 5. The transistor shown is a A) channel D. MOSFET B) p-channel EMOSFET C) channel - MOSFET D) e-channel D. MOSFET 30 The IGBT has characteristics of a A) BIT input and a FET output B) MOSFET input and a But output C) FET input and But output D) none of the above 35) The most important application for an 1GBT is in Al high voltage and high current switching B) logic circuits c) high frequency amplifiers Di power linear amplifiers 331 | 1 351 -