ECE 352 - Problem Set #8 - Due 5/9 by 11:59 pm Prob. 1. Silicon pn junction applied reverse voltage (a) Calculate the ge

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Ece 352 Problem Set 8 Due 5 9 By 11 59 Pm Prob 1 Silicon Pn Junction Applied Reverse Voltage A Calculate The Ge 1 (42.96 KiB) Viewed 32 times

ECE 352 - Problem Set #8 - Due 5/9 by 11:59 pm Prob. 1. Silicon pn junction applied reverse voltage (a) Calculate the generation current inside the depletion region for a p-n junction diode with a p-side doping of 1x107 cm, n-side doping of 1x100cm under a reverse bias of -2V. Assume room temperature with the following information: Effective lifetimes tp = In = TG = 1x10-55 mobility Mn = 660 cm /Vs. (b) Compare your value to the ideal diode value for reverse saturation given by: J' Dp D. Is=qn? LND 'LNU Hint: Use the generation current formula and see the example problem shown in my chapter notes on generation/recombination inside depletion region on page 3. JR qnW TG