Iv 20 Total Pts Consider The Mos Capacitor Shown Below The Substrate Doping Is N 1x10cm The Oxide Thickness 1x10 Cm 1 (28.05 KiB) Viewed 57 times
Iv 20 Total Pts Consider The Mos Capacitor Shown Below The Substrate Doping Is N 1x10cm The Oxide Thickness 1x10 Cm 2 (17.33 KiB) Viewed 57 times
IV. (20 total pts) Consider the MOS capacitor shown below The substrate doping is N-1x10cm. The oxide thickness=-1x10 cm. The gate is a metal and the gate metal potential is VGR0(the device is in equilibrium) Vaa Gate SIO P-SI Doping: N. Xdo a) (2pts) What is the potential for > b) (2pts) What is the electric field at X=X0 c) (2pts) Write the electric field at x = (in the semiconductor) as a function of x,, Na and d) (2pts) Write the potential at x=0 in the semiconductor as a function of x, Na and e) (2pts) Write the electric field at x=0 (in the oxide) as a function of Xan Na and (2pts) Write the potential as a function of, x, NC and ta 8) (2pts) Use this expression to find a numerical value of x2 For these questions Van 70 h) (2pts) Calculate the flatband voltage.
For these questions VGB #0 h) (2pts) Calculate the flatband voltage. i) (2pts) Write the applied voltage as a function of the flatland voltage, N., and Co j) (2pts) Calculate the threshold voltage V.TH
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