IV. (20 total pts) Consider the MOS capacitor shown below The substrate doping is NA=1x1016cm². The oxide thickness tox=

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Iv 20 Total Pts Consider The Mos Capacitor Shown Below The Substrate Doping Is Na 1x1016cm The Oxide Thickness Tox 1 (138.74 KiB) Viewed 49 times

IV. (20 total pts) Consider the MOS capacitor shown below The substrate doping is NA=1x1016cm². The oxide thickness tox=.1x104cm. The gate is a metal and the gate metal potential is ØM = 1V VGB=0 (the device is in equilibrium) = VGB Gate SIO2 P-Si Doping: N. .to 0 X do х a) (2pts) What is the potential Op for x>Xdo b) (2 pts) What is the electric field at x=Xdo c) (2pts) Write the electric field at x=0* (in the semiconductor) as a function of Xdo, Na and ksi d) (2pts) Write the potential at x=0+ ( in the semiconductor)as a function of O, Xdo. Na and Esi e) (2pts) Write the electric field at x=0 (in the oxide) as a function of Xdo. Na and Eox f) (2pts) Write the potential Ønas a function of Op , Xdo, Na, Esi, Cox, Eoxand tox р g) (2pts) Use this expression to find a numerical value of xdo For these questions VGB +0 h) (2pts) Calculate the flatband voltage. i) (2pts) Write the applied voltage as a function of the flatland voltage Op , Na, Esi, and Cox j) (2pts) Calculate the threshold voltage VTH