Q: Suppose an ideal MOS capacitor manufactured on a p-type silicon substrate with a thickness of an oxide film of 2 nm,
Posted: Sun May 15, 2022 3:16 pm
Q: Suppose an ideal MOS capacitor manufactured on a
p-type silicon substrate with a thickness of an oxide film of 2 nm,
an N+ polygate, and a doping concentration of
Na~1x10^16/cm3. Calculate these 5questions.
(1)(1)фв
(2)Cox
(3)W dep
(4)threshold
(5)Vg
Thankyou!!
p-type silicon substrate with a thickness of an oxide film of 2 nm,
an N+ polygate, and a doping concentration of
Na~1x10^16/cm3. Calculate these 5questions.
(1)(1)фв
(2)Cox
(3)W dep
(4)threshold
(5)Vg
Thankyou!!