Q: Suppose an ideal MOS capacitor manufactured on a
p-type silicon substrate with a thickness of an oxide film of 2 nm,
an N+ polygate, and a doping concentration of
Na~1x10^16/cm3. Calculate these 5questions.
(1)(1)фв
(2)Cox
(3)W dep
(4)threshold
(5)Vg
Thankyou!!
Q: Suppose an ideal MOS capacitor manufactured on a p-type silicon substrate with a thickness of an oxide film of 2 nm,
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Q: Suppose an ideal MOS capacitor manufactured on a p-type silicon substrate with a thickness of an oxide film of 2 nm,
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