Q: This is an ideal MOS capacitor manufactured on a p-type silicon substrate with a thickness of 2 nm, an N+ polygate, a
Posted: Sun May 15, 2022 3:15 pm
Q: This is an ideal MOS capacitor manufactured on a
p-type silicon substrate with a thickness of 2 nm, an N+ polygate,
and a doping concentration of Na~5x10^16/cm3.
(1) Calculate the value of the flat band voltage(Vfb) of
this capacitor.
(2) Calculate the W dep of the depletion
region.
(3) Calculate the threshold voltage(Vt).
Thank you for help me..!
p-type silicon substrate with a thickness of 2 nm, an N+ polygate,
and a doping concentration of Na~5x10^16/cm3.
(1) Calculate the value of the flat band voltage(Vfb) of
this capacitor.
(2) Calculate the W dep of the depletion
region.
(3) Calculate the threshold voltage(Vt).
Thank you for help me..!