Q: This is an ideal MOS capacitor manufactured on a
p-type silicon substrate with a thickness of 2 nm, an N+ polygate,
and a doping concentration of Na~5x10^16/cm3.
(1) Calculate the value of the flat band voltage(Vfb) of
this capacitor.
(2) Calculate the W dep of the depletion
region.
(3) Calculate the threshold voltage(Vt).
Thank you for help me..!
Q: This is an ideal MOS capacitor manufactured on a p-type silicon substrate with a thickness of 2 nm, an N+ polygate, a
-
answerhappygod
- Site Admin
- Posts: 899604
- Joined: Mon Aug 02, 2021 8:13 am
Q: This is an ideal MOS capacitor manufactured on a p-type silicon substrate with a thickness of 2 nm, an N+ polygate, a
Join a community of subject matter experts. Register for FREE to view solutions, replies, and use search function. Request answer by replying!