TIS 1. The depletion layer capacitance of a one sided junction is a function of the doping concentration in the low dope

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Tis 1 The Depletion Layer Capacitance Of A One Sided Junction Is A Function Of The Doping Concentration In The Low Dope 1 (43.55 KiB) Viewed 24 times

TIS 1. The depletion layer capacitance of a one sided junction is a function of the doping concentration in the low doped region. The inverse capacitance squared is a linear function of applied reverse bias voltage and related by the following equation. 2(Vbi +VR) een While plotted the above equation it shows like Fig. Probl. For a particular Silicon p+ n junction which obeys the above equation, find Na, Na, and depletion region width W if the intercept of the curve on voltage axis gives Voi = 0.742 eV and the slope is 3.92 x 10's (F/cm2) 2/V - । Stope CENA VR - 0 Fig. Prob. 1