4. [20 points] Following table shows an experiment designed in plasma etching process. Three factors (Gap, Power, Coded)

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4 20 Points Following Table Shows An Experiment Designed In Plasma Etching Process Three Factors Gap Power Coded 1 (32.55 KiB) Viewed 43 times

4. [20 points] Following table shows an experiment designed in plasma etching process. Three factors (Gap, Power, Coded) were investigated to study their effect on the etch rate (dependent variable) in a semiconductor water etching application. The or der of the experiment is as shown in the table below. Experiment Gap (cm) Power (W) Coded Etch Rate Order (A/m) 1 .6 350 -1 1054 2 .6 350 +1 936 3 .6 400 1179 .6 400 +1 1417 1.0 350 1049 1.0 350 +1 1287 1.0 400 927 8 1.0 400 +1 1345 a. State two possible flaws of this experiment. b. Explain what can be done to overcome the issues you mentioned. 145676 5