- Consider A Bar Of A P Type Si That Is Uniformly Doped With N 2 X 10 6 Cm 3 At 300k Light Is Illuminating The Left Si 1 (35.26 KiB) Viewed 31 times
Consider a bar of a p-type Si that is uniformly doped with N₁ = 2 x 10¹6 cm-3 at 300K. Light is illuminating the left si
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Consider a bar of a p-type Si that is uniformly doped with N₁ = 2 x 10¹6 cm-3 at 300K. Light is illuminating the left si
Consider a bar of a p-type Si that is uniformly doped with N₁ = 2 x 10¹6 cm-3 at 300K. Light is illuminating the left side of the material as shown in the figure below. Light p type x=() The steady-state concentration of excess carriers at x = 0 is Sp(0) = n(0) = 2 × 10¹4 cm-³. Assume the following material properties: Hn = 1200 cm² /Vs, p = 400 cm² /Vs, Tn0 = 10-6s, Tp0 = 5 x 10-7s. How far inside the semiconductor the excess electrons will go (order of magnitude)?
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