5.12 The deep-level transient spectroscopy data in Fig. P5.12 were obtained on a Schottky = barrier diode on an n-type S

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5 12 The Deep Level Transient Spectroscopy Data In Fig P5 12 Were Obtained On A Schottky Barrier Diode On An N Type S 1 (32.29 KiB) Viewed 51 times

5.12 The deep-level transient spectroscopy data in Fig. P5.12 were obtained on a Schottky = barrier diode on an n-type Si substrate containing two impurities. Y 1.07 x 1021 cm 2s ¹K-2, ND = 1015 cm³, Co 1 pF. Determine AE = Ec- Er, on, and NT for each deep-level impurity. -1x 10-17 0.5 ms, 1 ms. 1 ms, 2 ms. -2x 10-17 2 ms, 4 ms. 1₁=4 ms, 1₂ = 8 ms -3 × 10-17 250 300 T(K) SC (F) 150 200 350 400