Using Multisim, build the circuit shown below: Si 1 D Ri 3.3k92 w E20 V Si D2 R2 W 5.6 ΚΩ a- measure the voltages and cu

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Using Multisim, build the circuit shown below: Si 1 D Ri 3.3k92 w E20 V Si D2 R2 W 5.6 ΚΩ a- measure the voltages and currents in the following table. [5 points] 12 12 102 Vri VR2
b. If the diode (D2) is connected in the opposite direction, how the currents 11, 1, and Ip2 are affected? Measure their new values. [3 points) 1 12 1p2
Connect the circuit shown below for BJT in CE (Common Emitter) using MultiSim and measure 1o. I. 1. Vcs and Vas WWW 2K 200K 20v NPN Bipolar Transistor 20 V 1.5K TH 13 lo 1 VE Vse