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semi-conductor engineering question
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semi-conductor engineering question
semi-conductor engineering question
= Assume the following parameters for NPN-type BJT: Ne = 1 x 1017 cm-3, De = 10 cm²/s, xe = 0.6 um, and Le = 4 um. Ng = 5 x 1016cm-3, DB = 25 cm</s, XBo = 0.8 um, and Lp = 10 um Nc = 2 x 1015 cm -3 Ignore a leakage current between B-C, Jpco. Plot the Input Characteristics in Common-Base Configuration: That is, plot Je-Vbe curves under the following conditions at one graph. - X-axis range for Vbe: 0 - 0.79 V - fixed VCB:3 V and 30 V, respectively Find the values of Je under the following conditions and then compare them. - Je at VBE = 0.79 V and VCB = 3 V - Je at VBE 0.79 V and VCB = 30 V =
= Assume the following parameters for NPN-type BJT: Ne = 1 x 1017 cm-3, De = 10 cm²/s, xe = 0.6 um, and Le = 4 um. Ng = 5 x 1016cm-3, DB = 25 cm</s, XBo = 0.8 um, and Lp = 10 um Nc = 2 x 1015 cm -3 Ignore a leakage current between B-C, Jpco. Plot the Input Characteristics in Common-Base Configuration: That is, plot Je-Vbe curves under the following conditions at one graph. - X-axis range for Vbe: 0 - 0.79 V - fixed VCB:3 V and 30 V, respectively Find the values of Je under the following conditions and then compare them. - Je at VBE = 0.79 V and VCB = 3 V - Je at VBE 0.79 V and VCB = 30 V =
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