- Prob 2 Pn Junction Parameters Carrier Concentration Profiles At Room Temperature P Type N Type 1 00e 20 1 00e 19 1 0 1 (124.69 KiB) Viewed 28 times
Prob. 2. pn junction parameters - carrier concentration profiles at room temperature p type n type 1.00E+20 1.00E+19 1.00E+18 1.00E+17 1.00E+16 1.00E+15 1.00E+14 1.00E+13 1.00E+12 1.00E+11 1.00E+10 1.00E+09 1.00E+08 1.00E+07 1.00E+06 1.00E+05 1.00E+04 1.00E+03 1.00E+02 1.00E+01 1.00E+00 wo Xn a. Is the junction forward or reverse biased? State your reason b. What is the acceptor concentration on the p-side? C. What is the donor concentration on the n-side? d. What is the intrinsic carrier concentration? e. What is the built-in potential (y bi)? f. Do low level conditions apply? g. What is the applied voltage? h. Which is longer: the electron diffusion length on the P--side of the junction or the hole diffusion length on the N--side of the junction.