In an optical proximity printing system, briefly discuss how resolution can change with resist thickness. For an exposur
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In an optical proximity printing system, briefly discuss how resolution can change with resist thickness. For an exposur
In an optical proximity printing system, briefly discuss how resolution can change with resist thickness. For an exposure, the mask to wafer separation is 10 um and g-line exposure is used, what is the variation in resolution when a process using a 0.5 um-thick resist is changed to one using 2.5 um-thick resist? Assume k = 0.8.
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