In MOSFET measurements, if the threshold voltage when the drain voltage vd is 0.1v is 0.4v and the threshold voltage whe
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In MOSFET measurements, if the threshold voltage when the drain voltage vd is 0.1v is 0.4v and the threshold voltage whe
In MOSFET measurements, if the threshold voltage when the drain voltage vd is 0.1v is 0.4v and the threshold voltage when the drain voltage vd is 1.0 is 0.22v, obtain the drain driven barrier lowering (DIBL) of this device.
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