a) 4.5 x 1015 cc
b) 4.5 x 1015 m3
c) 0.3 x 10-6 cc
d) 0.3 x 10-6 m3
In silicon at T = 300 K the thermal-equilibrium concentration of electron is n0 = 5 x 10^4 cc. The hole concentration is
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In silicon at T = 300 K the thermal-equilibrium concentration of electron is n0 = 5 x 10^4 cc. The hole concentration is
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