(b) A conventional GaAs pn-junction based LED is operated at 300 K and driven by a voltage V, in series with a 80 22 res

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(b) A conventional GaAs pn-junction based LED is operated at 300 K and driven by a voltage V, in series with a 80 22 res

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B A Conventional Gaas Pn Junction Based Led Is Operated At 300 K And Driven By A Voltage V In Series With A 80 22 Res 1
B A Conventional Gaas Pn Junction Based Led Is Operated At 300 K And Driven By A Voltage V In Series With A 80 22 Res 1 (66.29 KiB) Viewed 37 times
(b) A conventional GaAs pn-junction based LED is operated at 300 K and driven by a voltage V, in series with a 80 22 resistance. The light output is required to be 1 mW. The injection efficiency is 100%, the extraction efficiency is 3%, and the radiative and non-radiative recombination lifetimes are 40 and 80 ns, respectively. Calculate the peak emission wavelength and the required voltage Vs. Assuming the GaAs pn- junction LED is working under strong forward bias and the band gap for GaAs is Eg= 1.424 eV. (8 Marks) =
Formulae List 1 m, = 13.6 GO) hv Poue = n. 1 9 1.24in. 2(um) ne, m n = ninn, ne 1 T, 1 T nr = n = = 1 1 T + T nr T + Irr + 1 E = E(n,ky,ky)= 2m thin + ħ{k} ħk} *+ 2m 2m T, Int W
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