When a forward bias voltage of 0.64 V was applied to an abrupt silicon pn-junction at 300 K, the hole diffusion current

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When A Forward Bias Voltage Of 0 64 V Was Applied To An Abrupt Silicon Pn Junction At 300 K The Hole Diffusion Current 1 (29.79 KiB) Viewed 47 times

please assist in part (i) (ii) and (iii) with clear working
solution.
When a forward bias voltage of 0.64 V was applied to an abrupt silicon pn-junction at 300 K, the hole diffusion current density measured J, (Xn) = 3.88 A/cm². Assume n=1*100 cm, Dr= 25 cm²/s, D = 10 cm /s, In = tp = 5x10-7s, and & = 11.7. (i) Starting from the expression for Jo, determine the dopant concentration at the n-side. (i) What is the value of the minority carrier hole concentration at the edge of the depletion region? (iii) If the total diode current density measured J= 4.49 A/cm², compute the value of electron diffusion current density Jn(-xp).