4 4 Points The Same Si Slab In Problem 3 Is Reduced In Size To The Dimension Of L 1 5 Um W 0 25 Um And T 0 05 1 (36.36 KiB) Viewed 41 times
Si slab in problem 3 : Uniformly doped with 2 * 10^17/cm^3
4. (4 points) The same si slab in problem 3 is reduced in size to the dimension of L = 1.5 um, w = 0.25 um, and t = 0.05 um and is also biased with 3 V. Calculate the total current flow at 300 K. *Saturated drift velocity of carriers in Si : Vsat = 10 cm/s *Electron mobility of Si at 300 K when impurity conc. is 2 x 1017 /cm3: Un = 600 cm2N-s
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