1. Consider a (100) silicon wafer having diameter of 300 mm and thickness of 775 µm. One side of the wafer is coated wit

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1 Consider A 100 Silicon Wafer Having Diameter Of 300 Mm And Thickness Of 775 Um One Side Of The Wafer Is Coated Wit 1 (38.28 KiB) Viewed 32 times

1. Consider a (100) silicon wafer having diameter of 300 mm and thickness of 775 µm. One side of the wafer is coated with 2 μm thick Al using PVD at 400 C. The wafer is then cooled down to room temperature 23 C. Assuming the Si substrate to be isotropic, find the following: a. the film stress, b. the stress in substrate at the substrate-film interface, and c. the curvature. 2. Is the film stress shown in (1) large enough to cause failure? 3. Sometimes, peeling of thin films is observed at the edges upon cooling down from process temperature to room temperature. Why?