Vin Objective: To study the large signal characteristics of the bipolar junction transistor though time domain character

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Vin Objective: To study the large signal characteristics of the bipolar junction transistor though time domain character

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Vin Objective To Study The Large Signal Characteristics Of The Bipolar Junction Transistor Though Time Domain Character 1
Vin Objective To Study The Large Signal Characteristics Of The Bipolar Junction Transistor Though Time Domain Character 1 (95.69 KiB) Viewed 31 times
please use Pspice simulator
Vin Objective: To study the large signal characteristics of the bipolar junction transistor though time domain characteristics. List of Parts: 1. 2N2222 BJT (or equivalent) 2. Resistors, 100Ω, 1Κ Ω,10Κ Ω, 100Κ Ω Procedure: Large Signal Characteristics of BJT 1-Capture the circuit below in Figure 1 and use the table to determine RB and Rc. 2-Set your supply (Vin) from OV-5V with a pulse width of 10μsec and a 50kHz repetition rate. Run simulation to display the input waveform and output waveform at the same time. 3-Record the rise time (tr), fall time (tr), time delay in the rise(tar), and time delay in the fall (tdf). Repeat step 1 using the rest of RB and Rc from the table. R₁ ww +5V ww Figure 1 2N2222 Vo Vin 5V OV RB Rc 10k Ω 100k Ω 100 Ω X 50kHz 1k Q 10k Ω
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