ASSIGNMENT No. 8 Q1. a. Distinguish between an ohmic and rectifying contact. For each type of contact give a definite po

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Assignment No 8 Q1 A Distinguish Between An Ohmic And Rectifying Contact For Each Type Of Contact Give A Definite Po 1 (45.67 KiB) Viewed 48 times

ASSIGNMENT No. 8 Q1. a. Distinguish between an ohmic and rectifying contact. For each type of contact give a definite point of application in integrated circuits (IC's). b. Holes are injected into a neutral n-type (N₁ = 10 m³) side of a silicon p-n junction device at room temperature. The initial concentration of injected holes (102⁰ m³) is found to drop to 10 min 40 µm. Calculate the diffusion length for holes Q2. a. Utilising your knowledge of ohms law, derive expressions for restivity and conductivity in semiconductors. b. Explain the following terms in relation to semiconductors: i. Excitation ii. Electron and hole traps Recombination centre Life time 111. iv. Q2. a. Describe any three methods of injecting excess charge carriers in a semiconductor. b. An n-type silicon sensor is irradiated with light, which results in the generation of excess minority carriers of concentration 10¹2 cm³. Calculate the minority carrier concentration in the sensor at lus after the light source is suddenly shut off. Assume donor density is 10¹³ cm³³. em