- 5 A Silicon Diode Is Fabricated By Starting With An N Type Substrate N 10 Cm Into Which Indium Is Diffused To For 1 (38.06 KiB) Viewed 28 times
5. A silicon diode is fabricated by starting with an n-type substrate (N = 10 cm³), into which indium is diffused to for
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5. A silicon diode is fabricated by starting with an n-type substrate (N = 10 cm³), into which indium is diffused to for
5. A silicon diode is fabricated by starting with an n-type substrate (N = 10 cm³), into which indium is diffused to form as a p-type region doped at 10¹ cm³. Assuming that an abrupt p' n junction is formed by the diffusion process. (20 marks) a. Calculate the Fermi level position in the p and n regions b. Determine the built in potential c. Calculate the depletion widths on the p and n side.