2. An abrupt Si PN junction at 300 K is characterized by ND = 10¹6 cm³ and NA = 2.5 x 10¹5 cm³. Calculate the built in p

[answerhappygod]

2 An Abrupt Si Pn Junction At 300 K Is Characterized By Nd 10 6 Cm And Na 2 5 X 10 5 Cm Calculate The Built In P 1 (66.5 KiB) Viewed 12 times

Kindly answer all the question. Write in good handwriting and send clearer picture. Please answer all of the question. Thanks for your help.
2. An abrupt Si PN junction at 300 K is characterized by ND = 10¹6 cm³ and NA = 2.5 x 10¹5 cm³. Calculate the built in potential, maximum electric field and depletion region width. Repeat the calculation with an applied reverse bias voltage of 1 V. (20 marks) 3. The region of a silicon device that is at room temperature (T = 300 K) is doped with 10¹5 cm³ acceptor atoms. A stream of minority carriers is injected at x = 0 and the -3 distribution of minority carriers in the sample is assumed to be linear, decreasing from a value of 10¹1 cm ³ at x = 0 to the equilibrium value at x = W, where W is 10 microns. (20 marks) a. Sketch the region. b. Determine the diffusion current density of electrons.