2. An abrupt Si PN junction at 300 K is characterized by No = 10¹6 cm ³ and NA= 2.5 x 10¹5 cm³. Calculate the built in p

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2. An abrupt Si PN junction at 300 K is characterized by No = 10¹6 cm ³ and NA= 2.5 x 10¹5 cm³. Calculate the built in p

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2 An Abrupt Si Pn Junction At 300 K Is Characterized By No 10 6 Cm And Na 2 5 X 10 5 Cm Calculate The Built In P 1
2 An Abrupt Si Pn Junction At 300 K Is Characterized By No 10 6 Cm And Na 2 5 X 10 5 Cm Calculate The Built In P 1 (13.37 KiB) Viewed 16 times
2. An abrupt Si PN junction at 300 K is characterized by No = 10¹6 cm ³ and NA= 2.5 x 10¹5 cm³. Calculate the built in potential, maximum electric field and depletion region width. Repeat the calculation with an applied reverse bias voltage of 1 V. (20 marks)
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