(a) (b) A Si sample of length 5 cm and cross-sectional area 1 mm² is doped with 5x 10¹5 cm³ donor atoms and 2×10¹5 cm³ a

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(a) (b) A Si sample of length 5 cm and cross-sectional area 1 mm² is doped with 5x 10¹5 cm³ donor atoms and 2×10¹5 cm³ a

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A B A Si Sample Of Length 5 Cm And Cross Sectional Area 1 Mm Is Doped With 5x 10 5 Cm Donor Atoms And 2 10 5 Cm A 1
A B A Si Sample Of Length 5 Cm And Cross Sectional Area 1 Mm Is Doped With 5x 10 5 Cm Donor Atoms And 2 10 5 Cm A 1 (59.1 KiB) Viewed 19 times
a and b?
(a) (b) A Si sample of length 5 cm and cross-sectional area 1 mm² is doped with 5x 10¹5 cm³ donor atoms and 2×10¹5 cm³ acceptor atoms at 300 K. Given that the sample has resistance of 740 and µ₁±µp=1860 cm²V-¹s²¹, determine the carrier mobilities. (i) (ii) If the probability an energy state is filled at Ec - kT is equal to the probability an energy state is empty at Ec-kT, find the location of the Fermi level. Sketch the Fermi-Dirac function at T = 0 K and use the diagram to explain why the conduction band of an intrinsic semiconductor is empty at T = 0 K.
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