8.25 A pin silicon diode is fabricated with a narrow n region as shown in Figure 8.11, in which WnLp. Assume the boundar

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8 25 A Pin Silicon Diode Is Fabricated With A Narrow N Region As Shown In Figure 8 11 In Which Wnlp Assume The Boundar 1 (49.04 KiB) Viewed 31 times

8.25 A pin silicon diode is fabricated with a narrow n region as shown in Figure 8.11, in which WnLp. Assume the boundary condition of p = po at x = x + W. (a) Derive the expression for the excess hole concentration Sp.(x) as given by Equation (8.31). (b) Using the results of part (a), show that the current density in the diode is given by J= eDpPro coth Lp P O Figure 8.111 Geometry of a "short" diode.