- A An Ideal Metal Semiconductor Contact Formed On Si With Qx 4 01 Ev N 7 5 X 10 6 Cm The Work Function Of The 1 (67.7 KiB) Viewed 29 times
(a) An ideal metal-semiconductor contact formed on Si with qx = 4.01 eV, N₁ = 7.5 x 10¹6 cm³³. The work function of the metal is ØM = 5.10 eV. Confirm if the contact is ohmic or rectifying (Schottky diode) in nature. (b) A Si p¹-n junction is doped with N₁ = 10¹8 cm²³ on the p-side and N₂ = 10¹4 cm on the n-side at 300 K. Calculate the reverse bias saturation current if the junction cross-sectional area is 0.1 mm², p = 0.1 µs and Dp = 250 cm²s¹. (c) -3 A Si pn junction is doped with NĄ = 5 × 10¹5 cm³ on the p-side and N₂ = 10¹4 cm³ on the n-side at 300 K and maintained under equilibrium conditions. Draw the energy band diagram of the pn junction and label your diagram properly.