subject - analog electronics
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10:53 O T O almost no current large current Overy narrow depletion region very low resistance 2. Which of the following is a characteristic of a reverse-biased p-n junction? 3. Breakdown of a pn diode may occur due to Tunneling effect Thermal instability Oavalanche multiplication O all of the above 4. A pn junction diode has Q 79% O Save : Onon-linear V-l characteristics very low forward current until the forward biased voltage reaches cut-in voltage forward resistance is somehow high all of the above # <
10:53 O O barrier path 5. In a pn junction with a zero bias condition, the electric field between acceptor and donor ions is called peak threshold T 6. In a LED, the color of the emitted light depends on reverse bias voltage forward bias voltage O semiconductor material dynamic resistance 7. Which one's breakdown voltage is the highest? Ge diode Si diode OGaAsP diode 3 O Q 79% /4 > Save < : ☆
10:53 O O electrons from n region diffuse to p region Oholes from p region diffuse to n region Oboth of the above will happen Onothing will happen T 8. If a pn junction is formed which of the following may usually take place? 9. A p-type semiconductor is doped with donor Carbon O acceptor 10. A zener diode will have a high breakdown voltage if only n side is lightly doped both p and n sides are heavily doped only p side is lightly doped Oboth p and n sides are lightly doped impurities This form was created inside of North South University Google Forms 4 Q 79% /4 > Save < : 33