- Particles In The Gas Come Closer To Each Other And As A Result The Mean Free Path Of The Particles Is Reduced This Incr 1 (119.97 KiB) Viewed 25 times
particles in the gas come closer to each other and as a result the mean free path of the particles is reduced. This incr
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particles in the gas come closer to each other and as a result the mean free path of the particles is reduced. This incr
particles in the gas come closer to each other and as a result the mean free path of the particles is reduced. This increases the collision rate and as we discussed earlier at every collision the charged particles loss their directed velocity along electric field and again they are re-accelerated towards field. It can be said that over all mobility of the charged particles is reduced so the voltage required to maintain the arc is increased. Another effect of the increased density of particles is a higher rate of deionization of gas due to the recombination of oppositely charged particles. The rate of ionization of gas depends upon the intensity of impact during collision of gas particles. The intensity of impact during collision of particles again depends upon velocity of random motions of the particles. This random motion of a particle and its velocity increases with increase of temperature of the gas. Hence it can be concluded like that if There are two methods by which interruption is done. 1. High resistance method. 2. Low resistance method or zero interruption method. In high interruption method we can increase the electrical resistance many times to such a high value that it forces the current to reach to zero and thus restricting the possibility of arc to be struck again. Proper steps must be taken in order to ensure that the rate at which the resistance is increased or decreased is not abnormal because it may lead to generation of harmful induced voltages in the system. The arc resistance can be increased by various methods like lengthening or cooling of the are etc Q.4) Design a TFF using: a) an SR FF and minimum gates. b) a D FF and minimum gates. c) a JK FF and minimum gates.