Q. silicon phosphorus is doped into p-type with original doping concentration of 1016 (3³ at 1150'c. given that solid so

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Q. silicon phosphorus is doped into p-type with original doping concentration of 1016 (3³ at 1150'c. given that solid so

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Q Silicon Phosphorus Is Doped Into P Type With Original Doping Concentration Of 1016 3 At 1150 C Given That Solid So 1
Q Silicon Phosphorus Is Doped Into P Type With Original Doping Concentration Of 1016 3 At 1150 C Given That Solid So 1 (65.44 KiB) Viewed 25 times
Q. silicon phosphorus is doped into p-type with original doping concentration of 1016 (3³ at 1150'c. given that solid solubility of phosphorus in silicon at 1150°C is 1020 cm-3 and the diffusion coefficient at this temp. is 10-12 cm ²7/ sec. calculate giver exfc (2.75) = 104 i) Total no. of phosphorus atoms per unit area of the si surface after predeposition time of thr. 11) The Junctim depth after predefosition. in is carried out for thos
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