A pn-junction diode is formed from a semiconductor that has the following properties: Cross-sectional area of the diode

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A Pn Junction Diode Is Formed From A Semiconductor That Has The Following Properties Cross Sectional Area Of The Diode 1 (22.99 KiB) Viewed 31 times

A pn-junction diode is formed from a semiconductor that has the following properties: Cross-sectional area of the diode = (7.91000x10^-3) (cm²) Temperature = (3.6000x10^2) (K) Intrinsic carrier concentration at this temperature = (3.4710x10^11) (cm-³) p-type side: N= (5.60000x10^15) (cm-³) Mp= (4.20000x10^2) (cm²-V-1.s-¹) Hn (9.0000x10^2) (cm²-v-1-s-¹) Tn = Tp = (7.50000x10^2) (ns) n-type side: N= (5.600x10^17) (cm³) Hp = (3.30000x10^2) (cm²-V-1.s-¹) Mn = (8.0000x10^2) (cm²-V-1.g-1) Tn = Tp = (4.0000x10^2) (ns) What is the current through this diode for an applied forward bias of (7.50000x10^-1) (V)? Give your answer in amperes to 4 significant digits.