Gallium arsenide has an index of refraction of 3.86 at a wavelength of 850 (nm). Assume the sample is in air and the lig

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Gallium Arsenide Has An Index Of Refraction Of 3 86 At A Wavelength Of 850 Nm Assume The Sample Is In Air And The Lig 1 (96.95 KiB) Viewed 22 times

Gallium arsenide has an index of refraction of 3.86 at a wavelength of 850 (nm). Assume the sample is in air and the light impinges at normal incidence for the below questions. a) What is the reflectance of the GaAs surface? (7 points) b) If a single layer antireflection coating is to be added to the surface of the GaAs semiconductor as shown in Figure 6, what index of refraction for the antireflection layer gives the minimum reflectance of the structure? (7 points) c) What should be the minimum thickness, d, of the antireflection coating which will give destructive interference between reflected portions of the light (labeled A and B in Figure 6)? (7 points) d) What is the value of the minimum reflectance of the structure (as shown in Figure 6)? (4 points) Incident light m D- Surface d 17₂ n3 Antireflection Semiconductor or photovoltaic device coating Figure 6. Single layer antireflection coating.