A silicon diode has a PN junction where the acceptor impurity concentration (NA) is 1 x 1018 cm-3 and the donor concentr

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A silicon diode has a PN junction where the acceptor impurity
concentration (NA) is 1 x 1018 cm-3 and the donor concentration
(ND) is 5 x 1017 cm-3 .
(a) Sketch band diagrams showing the pn-junction at equilibrium,
under a forward bias and under a reverse bias. Illustrate junction
depletion width in the donor and acceptor areas, and the most
important carrier flows in each diagram. [10 marks]
(b) A silicon diode has a PN junctions with an acceptor
concentration (NA) of 4 x 1017cm-3 and a donor concentration (ND)
at 1 x 1017 cm-3 . • Calculate the built-in potential ∅𝑏𝑏𝑏𝑏 •
Calculate the depletion width W • Calculate the junction
capacitance at a reverse bias Vr= 3V and the capacitance Cjo=1.5pF
[10marks]