a) A capacitively-coupled plasma discharge system has been designed for the ion-assisted etching of silicon wafers and i

[answerhappygod]

A A Capacitively Coupled Plasma Discharge System Has Been Designed For The Ion Assisted Etching Of Silicon Wafers And I 1 (185.22 KiB) Viewed 65 times

a) A capacitively-coupled plasma discharge system has been designed for the ion-assisted etching of silicon wafers and is shown in Fig. Q3. A plasma is generated in this system using CF4 gas at a pressure of 10 Pa. Fig. Q3. i) ii) Redraw this design in your answer book; label all the important components in the diagram and show where the wafer is placed. Explain in a few sentences why radio frequency (RF) power is used for this application, instead of DC power. In this design the area of the RF driven electrode is equal to the area of the grounded electrode. What can you say about the DC self-bias potential and the mean ion iii) energy at the silicon wafer surface? iv) Is this good for ion-energy assisted etching? Justify your answer. How does this change, if we redesign the discharge so that the driven electrode is smaller than the grounded electrode? Draw a typical graph of the applied RF voltage on the driven electrode versus time, for this case.