7.) (Based on Neaman, Problem 4.54) - Silicon at T-300K contains acceptor atoms at a concentration of Na-5 x 1015 cm-3.

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7 Based On Neaman Problem 4 54 Silicon At T 300k Contains Acceptor Atoms At A Concentration Of Na 5 X 1015 Cm 3 1 (12.94 KiB) Viewed 204 times

7 Based On Neaman Problem 4 54 Silicon At T 300k Contains Acceptor Atoms At A Concentration Of Na 5 X 1015 Cm 3 2 (29.72 KiB) Viewed 204 times

7 Based On Neaman Problem 4 54 Silicon At T 300k Contains Acceptor Atoms At A Concentration Of Na 5 X 1015 Cm 3 3 (30.31 KiB) Viewed 204 times

7 Based On Neaman Problem 4 54 Silicon At T 300k Contains Acceptor Atoms At A Concentration Of Na 5 X 1015 Cm 3 4 (30.31 KiB) Viewed 204 times

7.) (Based on Neaman, Problem 4.54) - Silicon at T-300K contains acceptor atoms at a concentration of Na-5 x 1015 cm-3. Donor atoms are now added forming an n-type compensated semiconductor such that the Fermi level is 0.215 eV below the conduction band edge. What is the concentration of donor atoms in the sample? -3 Answer: 1.22 x 10¹6 cm-³
8.) (Based on Neaman, Problem 4.55) - Silicon at T-300K is doped with acceptor atoms at a concentration of Na7.0 x 10¹5 cm-3 (a) Determine Ep - Ev. Answer: 0.19 eV (b) Calculate the concentration of additional acceptor atoms that must be added to move the Fermi level a distance kBT closer to the valence band edge. Answer: 1.20x10¹6 cm³ 9.) (Based on Neaman, Problem 4.58) - Determine the Fermi energy level with respect to the valence band energy for the following conditions. Assume the material is Gallium Arsenide:
9.) (Based on Neaman, Problem 4.58) - Determine the Fermi energy level with respect to the valence band energy for the following conditions. Assume the material is Gallium Arsenide: 2 (a) T= 300 K, N = 2 x 10¹5 cm-3, N₁ = 0 = 10¹6 cm-3 = (b) T-300 K, Nd=0, Na (c) T300 K, Na - Na 1015 cm-3 (d) T-400 K, Nd=0, N₁ = 10¹4 cm-3 (e) T500 K, Na 10¹4 cm-3, Na=0 =