Question 10 (a) The semiconductor silicon (in group 14) doped with enough impurity atoms of gallium (in group 13) to ens

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Question 10 A The Semiconductor Silicon In Group 14 Doped With Enough Impurity Atoms Of Gallium In Group 13 To Ens 1 (93.95 KiB) Viewed 26 times

Question 10 (a) The semiconductor silicon (in group 14) doped with enough impurity atoms of gallium (in group 13) to ensure that its electrical conductivity at room temperature is governed by the presence of these impurities. Are the gallium impurities acceptors or donors? Specify the charge carriers, the band they occupy and whether this is above or below the band gap. Is the sample of doped silicon n-type or p-type? (b) If all impurities could be removed, the resulting pure silicon would still be a semiconductor at room temperature. Explain why you would expect equal numbers of two different types of charge carrier in this case. Why would you expect the electrical conductivity to increase with temperature in the pure semiconductor?