Low excess avalanche noise factor is produced when A. Only one of the carriers can initiate impact ionisation events. B.

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answerhappygod
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Low excess avalanche noise factor is produced when A. Only one of the carriers can initiate impact ionisation events. B.

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Low excess avalanche noise factor is produced when
A. Only one of the carriers can initiate impact ionisation
events.
B. A semiconductor with a large bandgap is used.
C. Both electrons and holes can initiate impact ionisation with
equal probability. 错！
D. The breakdown voltage is low.
E. The intrinsic carrier concentration is high.
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