- 4 An Abrupt Si P N Junction Area 104 Cm Has The Following Properties At 300 K P Side N Side Na 10 8 Cm Nd 10 1 (65.16 KiB) Viewed 22 times
4. An abrupt Si p-n junction (Area = 104 cm²) has the following properties at 300 K. p-side n-side Na = 10¹8 /cm³ Nd=10¹
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4. An abrupt Si p-n junction (Area = 104 cm²) has the following properties at 300 K. p-side n-side Na = 10¹8 /cm³ Nd=10¹
4. An abrupt Si p-n junction (Area = 104 cm²) has the following properties at 300 K. p-side n-side Na = 10¹8 /cm³ Nd=10¹6/cm³ μp =200 cm²/V-s μp =400 cm²/V-s μn =800 cm²/V-s μn =1300 cm²/V-s i) Draw the energy band diagram of a p-n junction diode in both forward and reverse bias modes. [2+2] ii) Find the maximum electric field in p-n junction diode. [1] iii) Find the depletion width in n-side region. [2]
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