Q3 A rectangular slab of silicon is doped with 1022 m3 Boron (B) atoms. The intrinsic carrier concentration n, in silico

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Q3 A Rectangular Slab Of Silicon Is Doped With 1022 M3 Boron B Atoms The Intrinsic Carrier Concentration N In Silico 1 (69.78 KiB) Viewed 15 times

Q3 A rectangular slab of silicon is doped with 1022 m3 Boron (B) atoms. The intrinsic carrier concentration n, in silicon at 300K is 1.5x10¹6 m³ and it varies with temperature as T3/2exp(-Eg/2kT), where Eg-1.1eV is the bandgap energy, T is the absolute temperaturen K and k is Boltzmann's constant. The silicon slab is 6 μm long with a rectangular cross section of 2 um ² (1 μm x 2 μm). Assume kT-0.026 eV and kT/q-0.026 V. Assume that the electron mobility is ue 0.04 m²/Vs and that the hole mobility is un=0.02 m²/Vs. 2 (i) Evaluate the majority and minority carrier concentrations at 300 K and state the type of carrier (electrons or holes) Is this silicon p-type or n-type? (4 marks) (ii) If the temperature is raised to 360 K explain qualitatively the change in each type of carrier. (2 marks)