Q3 A Rectangular Slab Of Silicon Is Doped With 1022 M Boron B Atoms The Intrinsic Carrier Concentration N In Silico 1 (66.02 KiB) Viewed 12 times
Q3 A Rectangular Slab Of Silicon Is Doped With 1022 M Boron B Atoms The Intrinsic Carrier Concentration N In Silico 2 (12.21 KiB) Viewed 12 times
Q3 A rectangular slab of silicon is doped with 1022 m³ Boron (B) atoms. The intrinsic carrier concentration n, in silicon at 300K is 1.5x10¹6 m³ and it varies with temperature as 73/2exp(-Eg/2kT), where Eg-1.1eV is the bandgap energy, T is the absolute temperaturen K and k is Boltzmann's constant. The silicon slab is 6 um long with a rectangular cross section of 2 µm 2 (1 µm x 2 μm). Assume kT-0.026 eV and kT/q-0.026 V. Assume that the electron mobility is pe 0.04 m²/Vs and that the hole mobility is un=0.02 m²/Vs. (i) Evaluate the majority and minority carrier concentrations at 300 K and state the type of carrier (electrons or holes) Is this silicon p-type or n-type? (4 marks) (ii) If the temperature is raised to 360 K explain qualitatively the change in each type of carrier. (2 marks)
C: (111 Calculate the resistance of the slab described above at 300K and 360K. (6 marks)
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