5. A) An n-type Si wafer was subjected to a 35-minute pre-deposition process using Arsenic gas of a bulk concentration o

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5 A An N Type Si Wafer Was Subjected To A 35 Minute Pre Deposition Process Using Arsenic Gas Of A Bulk Concentration O 1 (107.55 KiB) Viewed 21 times

5. A) An n-type Si wafer was subjected to a 35-minute pre-deposition process using Arsenic gas of a bulk concentration of 1.5 x 1018 /cm3 at 1200 °C. Assuming dual diffusion process, determine the junction depth (in um) after the pre-deposition stage. The diffusion constant is 0.066 cm²/s, Arrhenius activation energy is 3.44 eV, and the solid solubility of the dopants in the water at 1200 °C is 4.2 x 1020 /cm³. (4 points) B) After the pre-deposition described in (A), the sample undergoes a drive-in diffusion at 1500 °C, and yields a final junction depth of 10.78 µm, determine the drive-in time, in hours. (6 points)