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3. The linear rate coefficient at 1200 °C dry oxidation is 1.125 μm/hr. If it took 45 minutes to grow the initial oxide,
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3. The linear rate coefficient at 1200 °C dry oxidation is 1.125 μm/hr. If it took 45 minutes to grow the initial oxide,
3. The linear rate coefficient at 1200 °C dry oxidation is 1.125 μm/hr. If it took 45 minutes to grow the initial oxide, for how long (in hours) should the wafer be subjected to another oxidation process to grow a sufficiently thin oxide of 12000Aº? (4 points)
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