1. A Si p-n-p BJT has the following parameters at room temperature. Emitter NA 5x108 cm3 T₁ = 100 ps H-150 cm²/Vs Hp-100

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1 A Si P N P Bjt Has The Following Parameters At Room Temperature Emitter Na 5x108 Cm3 T 100 Ps H 150 Cm Vs Hp 100 1 (49.95 KiB) Viewed 16 times

1. A Si p-n-p BJT has the following parameters at room temperature. Emitter NA 5x108 cm3 T₁ = 100 ps H-150 cm²/Vs Hp-100 cm²/Vs Base No=106 cm³ Tp = 2500 ps H-1500 cm²/Vs H₂=400 cm³/Vs Collector NA-10¹ cm T=2 μs He 1500 cm²/Vs Hp=450 cm²/Vs Base width W= 1 um Area=10 cm² a. Sketch the energy band diagram for the device. Properly position the Fermi level assuming equilibrium conditions. 5 points b. Sketch electrostatic potential, electric field and charge density as a function of position inside the BJT assuming equilibrium conditions. 5 points c. Calculate the net potential difference between the collector and emitter assuming equilibrium conditions. 5 points d. Determine the quasineutral width of the base (Wa- Xan Xac) assuming equilibrium conditions. 10 points e. Calculate the maximum magnitude of the electric fields in the E-B and C-B depletion region assuming equilibrium conditions. 5 points f. Calculate its a and B assuming equilibrium conditions. 10 points g. Determine the quasineutral width of the base (Wa-Xan-XEC) if Vin is forward biased by 0.7 V and Vca is reverse biased by 1 V. 10 points h. Calculate excess hole concentration in the base region at x = 0, 4p(0) and at x = w, Apg (w), assuming VER is forward biased by 0.7 V and Vca is reverse biased by 1 V. 10 points i. Calculate its a and Ba, assuming VEB is forward biased by 0.7 V and Vcs is reverse biased by 1 V. 10 points